Zhaoying Chen

most citedLaser-Assisted Metalorganic Chemical Vapor Deposition of GaN

10 citations · 12 across the 3 of their papers we have counts for

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physics.app-ph2021★ 10 cited

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2

Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…

physics.app-ph2020

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$

Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia +8

A new record-high room temperature electron Hall mobility ( $μ_{R T} = 194 c m^{2} / V s$ at $n \sim 8 \times 1 0^{15} c m^{- 3}$ ) for $β$ -Ga2O3 is demonstrated in the unin…

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Probing charge transport and background doping in MOCVD grown (010) β-Ga2​O3​

Probing charge transport and background doping in MOCVD grown (010) $β$ -Ga $_{2}$ O $_{3}$