2 papers
cond-mat.str-el2024
Charge gain via solid-state gating of an oxide Mott system
Lishai Shoham, Itai Silber, Gal Tuvia +10
The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. Howev…
cond-mat.mtrl-sci2020
Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet
Junho Seo, Eun Su An, Taesu Park +12
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulatin…