268 citations · 945 across the 15 of their papers we have counts for
15 papers
Fabrication of highly resistive NiO thin films for nanoelectronic applications
Johannes Mohr, Tyler Hennen, Daniel Bedau +3
Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging howe…
Intrinsic RESET speed limit of valence change memories
Moritz von Witzleben, Stefan Wiefels, Andreas Kindsmüller +7
During the last decade, valence change memory (VCM) has been extensively studied due to its promising features, such as a high endurance and fast switching times. The information i…
Current-limiting amplifier for high speed measurement of resistive switching data
T. Hennen, E. Wichmann, A. Elias +5
Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to control of delicate filamentary states in the oxide…
Picosecond Multilevel Resistive Switching in Tantalum Oxide Thin Films
Ulrich Böttger, Moritz von Witzleben, Viktor Havel +4
The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in o…
Design of materials properties and device performance in memristive systems
Michael Lübben, Felix Cüppers, Johannes Mohr +5
Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with me…
Self-Assembling Oxide Catalyst for Electrochemical Water Splitting
Daniel S. Bick, Andreas Kindsmueller, Deok-Yong Cho +8
Renewable energy conversion and storage, and greenhouse gas emission-free technologies are within the primary tasks and challenges for the society. Hydrogen fuel, produced by alkal…