Simulation of Optimum values of device parameters to attain Peak to Valley current Ratio (PVCR) in Resonant tunneling diodes (RTD)

Sushree Ipsita, Prasanta Kumar Mahapatra, Pradipta Panchadhyayee

Relations for the optimum well width, barrier width and width of the spacer layer to achieve highest PVCR on the basis of effective mass and barrier height in RTDs is proposed. The…