11 citations · 12 across the 3 of their papers we have counts for
3 papers
physics.app-ph2020
BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN-based high electron mobility transistor
Rongyu Lin, Xinwei Liu, Kaikai Liu +3
The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been…
physics.app-ph2020★ 1 cited
BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer
Wen Gu, Yi Lu, Rongyu Lin +7
The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously d…
physics.app-ph2019★ 11 cited
AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device
Yi Lu, Hsin-Hung Yao, Jingtao Li +4
Gallium Oxide (Ga2O3) has a huge potential on the power device for its high breakdown filed and good transport properties. beta-Ga2O3 as the thermodynamics stable phase, has been d…