activity
20012023
most citedFormation of extended thermal etch pits on annealed Ge wafers

13 citations · 28 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2023★ 13 cited

Polaronic and Mott insulating phase of layered magnetic vanadium trihalide VCl3

Dario Mastrippolito, Luigi Camerano, Hanna Swiatek +4

Two-dimensional (2D) van der Waals (vdW) magnetic -transition metal trihalides are a new class of functional materials showing exotic physical properties useful for spintronic…

cond-mat.mes-hall2019★ 2 cited

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

L. Persichetti, M. Fanfoni, B. Bonanni +5

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(0…

cond-mat.mtrl-sci2018★ 13 cited

Formation of extended thermal etch pits on annealed Ge wafers

L. Persichetti, M. Fanfoni, M. De Seta +4

An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 °C. This temperature range is relevant in many surface-prep…

physics.app-ph2018

Role of substrate on interaction of water molecules with graphene oxide and reduced graphene oxide

Roman Strzelczyk, Cristina E. Giusca, Francesco Perrozzi +3

We study local electronic properties of graphene oxide (GO) and reduced graphene oxide (RGO) on metallic (Pt) and insulating (Si3N4) substrates in controlled humidity environment.…

cond-mat.mtrl-sci2001

Mechanism of formation of a 2D binary alloy

L. Ottaviano, G. Profeta, L. Petaccia +4

Direct comparison of scanning tunneling microscopy and high resolution core level photo-emission experiments provides a rationale for the mechanism of formation of a two dimensiona…