97 citations · 271 across the 8 of their papers we have counts for
4 papers · 1 filter
On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy
P. Fiorenza, E. Schilirò, F. Giannazzo +4
The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…
3C-SiC grown on Si by using a SiGe buffer layer
M. Zimbone, M. Zielinski, E. G. Barbagiovanni +2
Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and…
Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy
F. Giannazzo, G. Greco, S. Di Franco +8
In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a…
Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon
Monia Spera, Giuseppe Greco, Raffaella Lo Nigro +5
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical a…