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From the 1 of 128 linked papers with an AI index.

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20242026
most citedEuclid: Photometric redshift calibration with the clustering redshifts technique

5 citations · 15 across the 40 of their papers we have counts for

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8 papers · 1 filter

cond-mat.mtrl-sci2026

Molecular Beam Epitaxy of AlScN Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response

Adriano Notarangelo, Rudeesun Songmuang, Mostafa Saleh +10

The paper reports the molecular beam epitaxy growth of Al₁₋ₓScₓN nanowires with controlled Sc content, integrates them into vertical piezoelectric nanogenerators, and demonstrates…

cond-mat.mtrl-sci2026

Partially reactive force field for the UiO-66 metal-organic framework

Akanksha Nawani, Rocio Semino

UiO-66 is the most widely studied metal-organic framework (MOF), on account of its structural tunability given by its capacity of sustaining high amounts of point defects in its st…

cond-mat.mtrl-sci2026

Machine Learning and Molecular Simulations Reveal Mechanisms of ZIFs Polymorph Selection

Emilio Méndez, Rocio Semino

Zn(imidazolate) metal-organic frameworks (MOFs) exhibit a remarkable degree of polymorphism. Because of their promising industrial applications, many research groups have inves…

cond-mat.mtrl-sci2026

From Ultrafast Demagnetization to Ultrafast Spintronics : a 30 years story

Quentin Remy, Stéphane Mangin

The discovery of femtosecond laser-induced ultrafast demagnetization in 1996 opened a new field, femtomagnetism, in which magnetic order can be quenched on timescales shorter than…

cond-mat.mtrl-sci2026

Dimensional control of the band-gap crossover in layered lead iodide

M. Rosmus, A. Antezak, A. Ptok +11

Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is…

cond-mat.mtrl-sci2025

Effects of Interactions and Defect Motion on Ramp Reversal Memory in Locally Phase Separated Materials

Y. Sun, M. Alzate Banguero, P. Salev +4

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted con…