activity
20192023
most citedMicroscopic Origin of the Electric Dzyaloshinskii-Moriya Interaction

12 citations · 36 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2023★ 11 cited

Nonlinear phonon Hall effects in ferroelectrics: its existence and non-volatile electrical control

W. Luo, J. Y. Ji, P. Chen +4

Nonlinear Hall effects have been previously investigated in non-centrosymmetric systems for electronic systems. However, they only exist in metallic systems and are not compatible…

cond-mat.mtrl-sci2023★ 9 cited

The anti-symmetric and anisotropic symmetric exchange interactions between electric dipoles in hafnia

Longju Yu, Hong Jian Zhao, Peng Chen +2

The anti-symmetric and anisotropic symmetric exchange interactions between two magnetic dipole moments - responsible for intriguing magnetic textures (e.g., magnetic skyrmions) - h…

cond-mat.mtrl-sci2022★ 12 cited

Microscopic Origin of the Electric Dzyaloshinskii-Moriya Interaction

Peng Chen, Hong Jian Zhao, Sergey Prosandeev +2

The microscopic origin of the electric Dzyaloshinskii-Moriya interaction (eDMI) is unveiled and discussed by analytical analysis and first-principles based calculations. As similar…

cond-mat.mtrl-sci2020★ 2 cited

Ferroelectric 180 degree walls are mechanically softer than the domains they separate

Christina Stefani, Louis Ponet, Konstantin Shapovalov +7

Domain walls are functionally different from the domains they separate, but little is known about their mechanical properties. Using scanning probe microscopy, we have measured the…

cond-mat.mtrl-sci2020

Liberation of slave modes inside domain walls in multiferroic Cu-Cl boracite

Peng Chen, Sergey Artyukhin

Domain walls (DWs), the two-dimensional boundaries between symmetry equivalent ferroic domains, are actively investigated due to their promise for novel logic and memory devices. M…

cond-mat.mtrl-sci2020★ 2 cited

Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall

Yen-Lin Huang, Lu Zheng, Peng Chen +10

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electr…