6 citations · 12 across the 5 of their papers we have counts for
6 papers
Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects
Jiali He, Ursula Ludacka, Kasper A. Hunnestad +12
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and c…
Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric
Michele Conroy, Didrik René Småbråten, Colin Ophus +11
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go w…
The third dimension of ferroelectric domain walls
Erik D. Roede, Konstantin Shapovalov, Thomas J. Moran +7
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small…
Tilt-driven antiferroelectricity in PbZrO
Konstantin Shapovalov, Massimiliano Stengel
Antiferroelectricity is a state of matter that has so far eluded a clear-cut definition. Even in the best-known material realization, PbZrO, the physical nature of the driving…
Ferroelectric 180 degree walls are mechanically softer than the domains they separate
Christina Stefani, Louis Ponet, Konstantin Shapovalov +7
Domain walls are functionally different from the domains they separate, but little is known about their mechanical properties. Using scanning probe microscopy, we have measured the…
Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy
J. Schaab, K. Shapovalov, P. Schoenherr +10
Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining…