4 papers
IMAGINE: An 8-to-1b 22nm FD-SOI Compute-In-Memory CNN Accelerator With an End-to-End Analog Charge-Based 0.15-8POPS/W Macro Featuring Distribution-Aware Data Reshaping
Adrian Kneip, Martin Lefebvre, Pol Maistriaux +1
Charge-domain compute-in-memory (CIM) SRAMs have recently become an enticing compromise between computing efficiency and accuracy to process sub-8b convolutional neural networks (C…
MANTIS: A Mixed-Signal Near-Sensor Convolutional Imager SoC Using Charge-Domain 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection
Martin Lefebvre, David Bol
Recent advances in artificial intelligence have prompted the search for enhanced algorithms and hardware to support the deployment of machine learning at the edge. More specificall…
A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-m Bulk and 22-nm FD-SOI
Martin Lefebvre, David Bol
Internet-of-Things (IoT) applications require nW-power current references that are robust to process, voltage and temperature (PVT) variations, to maintain the performance of IoT s…
A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI
Martin Lefebvre, Denis Flandre, David Bol
In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However…