4 papers
Ferroelectric gating of the PL in MoSe2
Xiaoyu Mao, Jun Fu, Ming Gong +1
We demonstrate a 2D ferroelectric heterostructure with monolayer MoSe and CuInPS (CIPS). In the heterostructure, the electric polarization of CIPS results in c electron…
Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3
Yue Li, Chen Chen, Wei Li +7
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, c…
Non-volatile ferroelectric memory effect in ultrathin α-In2Se3
Siyuan Wan, Yue Li, Wei Li +8
Recent experiments on layered α-In2Se3 have confirmed its room-temperature ferroelectricity under ambient condition. This observation renders α-In2Se3 an excellent platform for dev…
A switchable diode based on room-temperature two-dimensional ferroelectric α-In2Se3 thin layers
Siyuan Wan, Yue Li, Wei Li +3
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectri…