Charge dynamics and metal-insulator transition in Si${}_{1-x}$Gd${}_x$ and Si${}_{1-x}$Y${}_x$ alloys

D. N. Basov, A. M. Bratkovsky, P. F. Henning +5

Carrier dynamics in amorphous a-Si${}_{1-x}$RE${}_x$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy.…