activity
20192025
most citedAcceptor levels of the carbon vacancy in -SiC: combining Laplace deep level transient spectroscopy with density functional modeling

37 citations · 133 across the 7 of their papers we have counts for

collaborators
Showing 2025Show all

1 paper · 1 filter

cond-mat.mtrl-sci2025

On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films

Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich +6

The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grow…