A. Bhat

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 16 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2020★ 16 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…

physics.app-ph2020

Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM

S. Lashkare, A. Bhat, U. Ganguly

PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot…

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​-Based Resistive RAM

Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM