S. Prasad

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 17 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2020★ 16 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…

cond-mat.mtrl-sci2016★ 1 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ Based Resistive RAM

A. Khanna, S. Prasad, N. Panwar +1

Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally…

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​-Based Resistive RAM

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​ Based Resistive RAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ Based Resistive RAM