3 citations · 4 across the 2 of their papers we have counts for
2 papers
physics.app-ph2021★ 1 cited
High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz
Peng Cui, Hang Chen, John Q. Xiao +1
Scaling of GaN high-electron-mobility transistors (HEMTs) usually increases gate leakage current and deteriorates breakdown characteristic, limiting the maximum drain current and o…
physics.app-ph2020★ 3 cited
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
Peng Cui, Meng Jia, Guangyang Lin +3
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC)…