23 citations · 26 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 23 cited
Light and microwave driven spin pumping across FeGaB-BiSb interface
Vinay Sharma, Weipeng Wu, Prabesh Bajracharya +7
3-D topological insulators (TI) with large spin Hall conductivity have emerged as potential candidates for spintronic applications. Here, we report spin to charge conversion in bil…
physics.app-ph2020★ 3 cited
Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing
Peng Cui, Meng Jia, Guangyang Lin +3
In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC)…