most citedFmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing

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physics.app-ph2020★ 3 cited

Fmax = 270 GHz InAlN/GaN HEMT on Si with forming gas/nitrogen two-step annealing

Peng Cui, Meng Jia, Guangyang Lin +3

In this letter, N2 and forming gas (FG) were used during ohmic contact annealing of InAlN/GaN HEMTs on Si. It is found that N2 annealing offers lower ohmic contact resistance (RC)…