activity
20192023
most citedMagneto-ionic control of spin polarization in magnetic tunnel junctions

48 citations · 88 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023

Evolution of ferromagnetic stripes in FePt films at low temperature

Cynthia P. Quinteros, Dafne Goijman, Silvia Damerio +1

Patterns of ferroic domains and domain walls are being intensively studied to implement new logic schemes. Any technological application of such objects depends on a detailed under…

cond-mat.mtrl-sci2022★ 5 cited

Ferroelastic domain walls in BiFeO as memristive networks

Jan Rieck, Davide Cipollini, Mart Salverda +3

Electronic conduction along individual domain walls (DWs) has been reported in BiFeO (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate region…

cond-mat.mtrl-sci2022

Collective electrical response of simulated memristive arrays using SPICE

G. A. Sanca, F. Di Francesco, F. Golmar +1

Self-assembled structures are possible solutions to the problem of increasing the density and connectivity of memristive units in massive arrays. Although they would allow surpassi…

cs.ET2021★ 3 cited

Spatio-temporal evolution of resistance state in simulated memristive networks

Fabrizio Di Francesco, Gabriel A. Sanca, Cynthia P. Quinteros

Originally studied for their suitability to store information compactly, memristive networks are now being analysed as implementations of neuromorphic circuits. An extremely high n…

cond-mat.dis-nn2021

Field-dependent roughness of moving domain walls in a Pt/Co/Pt magnetic thin film

María José Cortés Burgos, Pamela C. Guruciaga, Daniel Jordán +5

The creep motion of domain walls driven by external fields in magnetic thin films is described by universal features related to the underlying depinning transition. One key paramet…

cond-mat.mtrl-sci2020★ 2 cited

Plausible physical mechanisms for unusual volatile/non-volatile resistive switching in HfO2-based stacks

Cynthia P. Quinteros, Jordi Antoja-Lleonart, Beatriz Noheda

Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applicatio…

cond-mat.mes-hall2020★ 19 cited

Tunnel Magnetoresistance in Self-Assemblies of Exchange Coupled Core/Shell Nanoparticles

Fernando Fabris, Enio Lima, Cynthia Quinteros +8

We report the precise control of tunneling magnetoresistance (TMR) in devices of self-assembled core/shell FeO/CoZnFeO nanoparticles ().…

cond-mat.mtrl-sci2020★ 11 cited

Impact of growth conditions on the domain nucleation and domain wall propagation in Pt/Co/Pt stacks

C. P. Quinteros, M. J. Cortes Burgos, L. J. Albornoz +7

Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aimin…

cond-mat.mtrl-sci2019★ 48 cited

Magneto-ionic control of spin polarization in magnetic tunnel junctions

Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4

Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…