most citedThe importance of overcoming MOVPE surface evolution instabilities for >1.3 m metamorphic lasers on GaAs

4 citations · 4 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2021★ 4 cited

The importance of overcoming MOVPE surface evolution instabilities for >1.3 m metamorphic lasers on GaAs

Enrica E. Mura, Agnieszka M. Gocalinska, Megan O'Brien +7

We investigated and demonstrated a 1.3 m-band laser grown by metalorganic vapour phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic graded InGaAs…

physics.app-ph2020

Micro-transfer printing high-efficiency GaAs photovoltaic cells onto silicon for wireless power applications

Ian Mathews, David Quinn, John Justice +5

Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high…