M. Urquiza

activity

20202024

collaborators

3 papers

cond-mat.mtrl-sci2024

K-edge XANES of octahedral aluminum compounds: similarities and differences via the analysis of excitonic properties

Newman Amoyaw, Abezu Agegnehu, Francesco Sottile +2

This study presents an \textit{ab initio} investigation of the XANES spectra at the aluminum K edge for three compounds: Al $_{2}$ O $_{3}$ , AlF $_{3}$ and AlCl $_{3}$ , where the Al atoms share…

cond-mat.mtrl-sci2023

Connections between resonant inelastic x-ray scattering and complementary x-ray spectroscopies: probing excitons at Al K and L $_{1}$ edges of $α$ -Al $_{2}$ O $_{3}$

M. Laura Urquiza, Matteo Gatti, Francesco Sottile

We present an ab initio study of neutral core and valence electronic excitations in α-Al2O3 by solving the Bethe-Salpeter equation (BSE) of many-body perturbation theory within an…

cond-mat.mes-hall2020

Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS $_{2}$ lateral metal-semiconductor junctions from first-principles

M. Laura Urquiza, Xavier Cartoixà

We have studied the finite bias transport properties of a 2H-1T' MoS $_{2}$ lateral metal-semiconductor (M-S) junction by non-equilibrium Green's functions calculations, aimed at cont…

K-edge XANES of octahedral aluminum compounds: similarities and differences via the analysis of excitonic properties

Connections between resonant inelastic x-ray scattering and complementary x-ray spectroscopies: probing excitons at Al K and L1​ edges of α-Al2​O3​

Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS2​ lateral metal-semiconductor junctions from first-principles

Connections between resonant inelastic x-ray scattering and complementary x-ray spectroscopies: probing excitons at Al K and L $_{1}$ edges of $α$ -Al $_{2}$ O $_{3}$

Schottky barriers, emission regimes and contact resistances in 2H-1T' MoS $_{2}$ lateral metal-semiconductor junctions from first-principles