activity
20202026
most citedInsights into image contrast from dislocations in ADF-STEM

27 citations · 35 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2026★ 1 cited

Unravelling the Role of Stacking Disorder on the Optoelectronic Properties of Zn3P2

Francesco Salutari, Nico Kawashima, Aidas Urbonavicius +9

Zinc phosphide (Zn3P2) is a promising photovoltaic absorber for thin-film and flexible solar cells due to its earth-abundant composition and favourable optoelectronic properties. R…

cond-mat.mtrl-sci2026

ZnO/ZnS heterostructures as hole reservoir to boost Ni foam energy storage performance

Alessia Fischetti, Giacometta Mineo, Daniela Russo +8

Low-cost and environmentally friendly electrochemical energy storage systems are crucial to address the increasing global energy demand. Nanomaterials can play a pivotal role in ca…

cond-mat.mtrl-sci2025

Unconventional cross sections in zinc phosphide nanowires grown using exclusively earth-abundant components

Simon Escobar Steinvall, Hampus Thulin, Nico Kawashima +8

To enable lightweight and flexible solar cell applications it is imperative to develop direct bandgap absorber materials. Moreover, to enhance the potential sustainability impact o…

cond-mat.mtrl-sci2025

Interfaces in epitaxially grown Zn3P2 nanowires and their composition dependent optoelectronic properties for photovoltaic applications

Simon Escobar Steinvall, Francesco Salutari, Jonas Johansson +7

Epitaxially grown nanowires have shown promise for photovoltaic applications due to their nanophotonic properties. Moreover, the mechanical properties of nanowires can reduce cryst…

cond-mat.mtrl-sci2024★ 6 cited

Artificial Intelligence-Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Marc Botifoll, Ivan Pinto-Huguet, Enzo Rotunno +17

(Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the…

cond-mat.mtrl-sci2021★ 1 cited

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Daria V. Beznasyuk, Sara Martí-Sánchez, Jung-Hyun Kang +12

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potenti…