activity
20202026
most citedA Deeper Look into RowHammer`s Sensitivities: Experimental Analysis of Real DRAM Chips and Implications on Future Attacks and Defenses

73 citations · 126 across the 35 of their papers we have counts for

collaborators

38 papers

cs.AR2026

Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips

Ataberk Olgun, Spiros Galanopoulos, Andreas Kosmas Kakolyris +4

We perform the first comprehensive experimental characterization of power consumed by real HBM2 DRAM chips. Our extensive characterization yields 1) the empirical basis for develop…

cs.AR2026

Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena

Haocong Luo, Longda Zhou, Ataberk Olgun +5

DRAM read disturbance, like RowHammer and RowPress, is a critical robustness issue where accessing DRAM can cause unintended bitflips in other unaccessed DRAM locations. DRAM read…

cs.AR2026

Clutch: High Performance Vector-Scalar Comparison using DRAM via Chunked Temporal Coding

Daichi Tokuda, Tatsuya Kubo, Ismail Emir Yuksel +8

Vector-scalar comparison is a fundamental computation primitive that compares each element in a vector against a single scalar value. It is widely used in various data-intensive wo…

cs.AR2026

DejaVu: Why You Should Write to Your DRAM Rows Twice, Carefully

Haocong Luo, İsmail Emir Yüksel, Ataberk Olgun +4

We provide the first experimental demonstration of DejaVu, a phenomenon where the data previously written to DRAM cells affects DRAM's vulnerability to read disturbance. Our experi…

cs.AR2026

Ramulator 2.1: A Composable Memory System Simulator for Modern DRAM Systems

Haocong Luo, F. Nisa Bostancı, Ataberk Olgun +4

Ramulator 2.1 is a major overhaul of Ramulator 2.0 that substantially improves the simulator in three directions: 1) support of modern and emerging DRAM and memory-controller featu…

cs.AR2026

PuDGhost: Experimental Analysis of Computation Result Corruption in Processing-using-DRAM Operations on Real DRAM Chips and Implications for Future Systems

Daichi Tokuda, İsmail Emir Yüksel, Tatsuya Kubo +7

Processing-using-DRAM (PuD) is a promising computation paradigm that alleviates frequent data movement between main memory and processing units by using each DRAM column as a compu…

cs.AR2026

A Modern Large-Scale Memory Characterization Laboratory

Ataberk Olgun, Haocong Luo, Ismail Emir Yuksel +3

Real memory chip characterization yields insights into fundamental operational characteristics of modern memory, enabling new mechanisms that improve memory performance, robustness…

cs.CR2026

ScaleDisturb: Exploiting Temporal Asymmetry to Amplify Read Disturbance in Modern DRAM Chips

Jikun Wang, Haocong Luo, Ataberk Olgun +6

DRAM suffers from read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or continuously keeping open a DRAM row (aggressor row) induces bitflips in…

cs.AR2026

DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM Chips

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel +4

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read distu…

cs.AR2025

ColumnDisturb: Understanding Column-based Read Disturbance in Real DRAM Chips and Implications for Future Systems

İsmail Emir Yüksel, Ataberk Olgun, F. Nisa Bostancı +3

We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row)…

cs.AR2025

Cleaning up the Mess: Re-Evaluating the Real-System Modeling Accuracy of Ramulator 2.0

F. Nisa Bostanci, Haocong Luo, Ataberk Olgun +4

A MICRO 2024 best paper runner-up publication (the Mess paper) with all three artifact badges awarded (including ``Reproducible'') proposes a new benchmark to evaluate real and sim…

cs.AR2025

PuDHammer: Experimental Analysis of Read Disturbance Effects of Processing-using-DRAM in Real DRAM Chips

Ismail Emir Yuksel, Akash Sood, Ataberk Olgun +6

Processing-using-DRAM (PuD) is a promising paradigm for alleviating the data movement bottleneck using DRAM's massive internal parallelism and bandwidth to execute very wide operat…

cs.AR2025

Revisiting DRAM Read Disturbance: Identifying Inconsistencies Between Experimental Characterization and Device-Level Studies

Haocong Luo, İsmail Emir Yüksel, Ataberk Olgun +2

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM…

cs.AR2025

Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel +6

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance thr…

cs.CR2025

Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance

Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +6

We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Countin…

cs.AR2024★ 1 cited

An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips

Haocong Luo, Ismail Emir Yüksel, Ataberk Olgun +3

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different…

cs.AR2024

RowPress Vulnerability in Modern DRAM Chips

Haocong Luo, Ataberk Olgun, A. Giray Yağlıkçı +6

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowH…

cs.AR2024

Simultaneous Many-Row Activation in Off-the-Shelf DRAM Chips: Experimental Characterization and Analysis

Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci +8

We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DR…

cs.AR2024★ 1 cited

PIM-Opt: Demystifying Distributed Optimization Algorithms on a Real-World Processing-In-Memory System

Steve Rhyner, Haocong Luo, Juan Gómez-Luna +6

Modern Machine Learning (ML) training on large-scale datasets is a very time-consuming workload. It relies on the optimization algorithm Stochastic Gradient Descent (SGD) due to it…

cs.CR2024

Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Abdullah Giray Yağlıkçı, Yahya Can Tuğrul, Geraldo F. Oliveira +4

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHa…

cs.AR2024★ 1 cited

Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis

Ismail Emir Yuksel, Yahya Can Tugrul, Ataberk Olgun +7

Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the…

cs.AR2024

Rethinking the Producer-Consumer Relationship in Modern DRAM-Based Systems

Minesh Patel, Taha Shahroodi, Aditya Manglik +4

Generational improvements to commodity DRAM throughout half a century have long solidified its prevalence as main memory across the computing industry. However, overcoming today's…

cs.AR2023★ 3 cited

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci +8

Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, P…

cs.CR2023★ 2 cited

Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips

Ataberk Olgun, Majd Osseiran, Abdullah Giray Yaglikci +6

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Ba…