38 citations · 70 across the 4 of their papers we have counts for
4 papers
Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4
Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…
Nano-ARPES investigation of twisted bilayer tungsten disulfide
Giovanna Feraco, Oreste De Luca, Przemysław Przybysz +13
The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects t…
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Substrate induced nanoscale resistance variation in epitaxial graphene
Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi +8
Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies…