collaborators

1 paper

cond-mat.mtrl-sci2025

Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design

Chao Zhou, Yanpeng Feng, Liyang Ma +10

Due to traits of CMOS compatibility and scalability, HfO2-based ferroelectrics are promising candidates for next-generation memory devices. However, their commercialization has bee…