118 citations · 234 across the 9 of their papers we have counts for
9 papers
Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glass
M. Hughes, W. Yang, D. Hewak
The authors describe the fabrication of buried waveguides in a highly nonlinear chalcogenide glass, gallium lanthanum sulfide, using focused femtosecond laser pulses. Through optic…
Spin echo from erbium implanted silicon
Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta +3
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of…
Erbium implanted silicon for solid-state quantum technologies
Mark A. Hughes, Naitik A. Panjwani, Matias Urdampilleta +6
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er i…
Electrical properties of Bi-implanted amorphous chalcogenide films
Yanina G. Fedorenko
The impact of Bi implantation on the conductivity and the thermopower of GeTe, Ge-Sb-Te, and Ga- La-S films is investigated. The enhanced conductivity appears to be notably sensiti…
Spectroscopy of vanadium (III) doped gallium lanthanum sulphide chalcogenide glass
M. Hughes, R. J. Curry, H. Rutt +1
Vanadium doped gallium lanthanum sulphide glass (V:GLS) displays three absorption bands at 580, 730 and 1155 nm identified by photoluminescence excitation measurements. Broad photo…
Modified chalcogenide glasses for optical device applications
Mark A. Hughes
This thesis focuses on two different, but complementary, aspects of the modification of gallium lanthanum sulphide (GLS) glasses. Firstly the addition of transition metal ions as d…
Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glass
M. Hughes, D. W. Hewak, R. J. Curry
In this paper we present the fluorescence decay profiles of vanadium and titanium doped gallium lanthanum sulphide (GLS) glass at various doping concentrations between 0.01 and 1%…
n-Type Chalcogenides by Ion Implantation
Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour +8
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and…
Electrical properties of Bi-implanted amorphous chalcogenide films
Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux +9
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced…