62 citations · 75 across the 7 of their papers we have counts for
7 papers
Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
Brelon J. May, Jae Jin Kim, Patrick Walker +4
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the…
Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
Malik Hassanaly, Hariswaran Sitaraman, Kevin L. Schulte +5
Hydride Vapor Phase Epitaxy (HVPE) is a promising technology that can aid in the cost reduction of III-V materials and devices manufacturing, particularly high-efficiency solar cel…
Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy
John Simon, Kevin L. Schulte, Kelsey Horowitz +3
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved perform…
Wide Area X-ray Surveys for AGN and Starburst Galaxies
A. Ptak
While often the point sources in X-ray surveys are dominated by AGN, with the high sensitivity of modern X-ray telescopes such as Chandra and XMM-Newton normal/starburst galaxies a…
X-ray Luminosity Functions of Normal Galaxies in the GOODS
A. Ptak, B. Mobasher, A. Hornschemeier +2
We present soft (0.5-2 keV) X-ray luminosity functions (XLFs) in the Great Observatories Origins Deep Survey (GOODS) fields, derived for galaxies at z~0.25 and 0.75. SED fitting wa…
Resolving the X-ray Spectral Paradox: XMM-Newton Spectra of Faint Sources in the Lockman Hole
R. E. Griffiths, A. Ptak, T. Miyaji
Using 100ks of XMM-Newton data on the Lockman Hole, we show how the X-ray background 'spectral paradox' is being resolved. We find the summed spectra of the Type I AGN, Type II AGN…