25 citations · 67 across the 5 of their papers we have counts for
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physics.app-ph2019★ 9 cited
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
physics.app-ph2019★ 19 cited
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Sachin Gupta, F. Rortais, R. Ohshima +4
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS…