S. Ringel

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/ B a T i O_{3} / β - G a_{2} O_{3}

Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

123 citations · 123 across the 3 of their papers we have counts for

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physics.app-ph2020

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7

The performance of ultra-wide band gap materials like $β$ -Ga $_{2}$ O $_{3}$ is critically dependent on achieving high average electric fields within the active region o…

physics.app-ph2019

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone +5

We report on the design and demonstration of $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer…

physics.app-ph2019

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone +6

We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass…

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

High electron density β−(Al0.18​Ga0.82​)2​O3​/Ga2​O3​ modulation doping using ultra-thin (1 nm) spacer layer

Mechanism of Si doping in Plasma Assisted MBE Growth of \b{eta}-Ga2O3

High electron density $β - (A l_{0.18} G a_{0.82})_{2} O_{3} / G a_{2} O_{3}$ modulation doping using ultra-thin (1 nm) spacer layer