Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan +7

The performance of ultra-wide band gap materials like $\beta$-Ga${}_2$O${}_3$ is critically dependent on achieving high average electric fields within the active region o…