A. Tan

most citedNegative Capacitance Enables FinFET Scaling Beyond 3nm Node

14 citations · 16 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2021

Ferroelectric HfO $_{2}$ Memory Transistors with High- $κ$ Interfacial Layer and Write Endurance Exceeding $1 0^{10}$ Cycles

Ava Jiang Tan, Yu-Hung Liao, Li-Chen Wang +3

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding $1 0^{10}$ cycles. The ferroelectric transistors (FeFETs) incorporate…

physics.app-ph2020★ 14 cited

Negative Capacitance Enables FinFET Scaling Beyond 3nm Node

Ming-Yen Kao, Harshit Agarwal, Yu-Hung Liao +6

A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm n…

physics.app-ph2020★ 2 cited

Anomalous Subthreshold Behaviors in Negative Capacitance Transistors

Yu-Hung Liao, Daewoong Kwon, Suraj Cheema +5

Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, su…

Ferroelectric HfO2​ Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

Negative Capacitance Enables FinFET Scaling Beyond 3nm Node

Anomalous Subthreshold Behaviors in Negative Capacitance Transistors

Ferroelectric HfO $_{2}$ Memory Transistors with High- $κ$ Interfacial Layer and Write Endurance Exceeding $1 0^{10}$ Cycles