14 citations · 16 across the 3 of their papers we have counts for
3 papers · 1 filter
Ferroelectric HfO Memory Transistors with High- Interfacial Layer and Write Endurance Exceeding Cycles
Ava Jiang Tan, Yu-Hung Liao, Li-Chen Wang +3
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding cycles. The ferroelectric transistors (FeFETs) incorporate…
Negative Capacitance Enables FinFET Scaling Beyond 3nm Node
Ming-Yen Kao, Harshit Agarwal, Yu-Hung Liao +6
A comprehensive study of the scaling of negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that the NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm n…
Anomalous Subthreshold Behaviors in Negative Capacitance Transistors
Yu-Hung Liao, Daewoong Kwon, Suraj Cheema +5
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, su…