70 citations · 115 across the 6 of their papers we have counts for
6 papers
Spatiotemporally Controlled Room Temperature Exciton Transport under Dynamic Pressure
Kanak Datta, Zhengyang Lyu, Zidong Li +3
Two-dimensional transition metal dichalcogenides (TMDs) provide an attractive platform for studying strain dependent exciton transport at room temperature due to large exciton bind…
An Accurate Current Model for III-V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient
Ehsanur Rahman, Abir Shadman, Sudipta Romen Biswas +2
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective mo…
Electronic Properties of MoS2/MX2/MoS2 Trilayer Heterostructures: A First Principle Study
Kanak Datta, Quazi D. M. Khosru
In this work, we have presented a first principle simulation study on the electronic properties of MoS2/MX2/MoS2 (M=Mo or W; X=S or Se) trilayer heterostrcuture. We have investigat…
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
Kanak Datta, Abir Shadman, Ehsanur Rahman +1
Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation…
Simulation of Thin-TFETs Using Transition Metal Dichalcogenides: Effect of Material Parameters, Gate Dielectric on Electrostatic Device Performance
Kanak Datta, Quazi D. M. Khosru
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials li…
III-V Tri-Gate Quantum Well MOSFET: Quantum Ballistic Simulation Study for 10nm Technology and Beyond
Kanak Datta, Quazi D. M. Khosru
In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold an…