2 citations · 2 across the 1 of their papers we have counts for
3 papers
An Accurate Current Model for III-V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient
Ehsanur Rahman, Abir Shadman, Sudipta Romen Biswas +2
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective mo…
A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor
Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed +2
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation f…
Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors
Kanak Datta, Abir Shadman, Ehsanur Rahman +1
Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation…