37 citations · 91 across the 7 of their papers we have counts for
Showing cond-mat.mes-hallShow all
2 papers · 1 filter
cond-mat.mes-hall2020★ 2 cited
An Accurate Current Model for III-V Field Effect Transistors Using a Novel Concept of Effective Transmission Coefficient
Ehsanur Rahman, Abir Shadman, Sudipta Romen Biswas +2
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective mo…
cond-mat.mes-hall2018
A Physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor
Ehsanur Rahman, Abir Shadman, Imtiaz Ahmed +2
In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation f…