2 papers
cond-mat.mtrl-sci2020
Atomic origin for hydrogenation promoted bulk oxygen vacancies removal in vanadium dioxide
Bowen Li, Min Hu, Hui Ren +5
Oxygen vacancies (VO), a common type of point defects in metal oxides materials, play important roles on the physical and chemical properties. To obtain stoichiometric oxide crysta…
physics.app-ph2020
\b{eta}-phase (AlxGa1-x)2O3 thin film with Al composition more than 70%
Che-Hao Liao, Kuang-Hui Li, C. G. Torres. Castanedo +2
In this work, we have demonstrated wide-composition-range \b{eta}-(AlxGa1-x)2O3 thin films with record-high Al compositions up to 77% for \b{eta}-(AlxGa1-x)2O3 covering bandgaps fr…