From the 1 of 2 linked papers with an AI index.
2 papers
physics.app-ph2026
Are gate-all-around 2D CFETs the optimal architecture for the A2 node and beyond?
Fengben Xi, Gautam Gaddemane, Anshul Gupta +15
The paper investigates whether gate‑all‑around (GAA) 2D complementary field‑effect transistors (CFETs) can outperform silicon GAA CFETs at the A2 technology node, presenting an int…
physics.app-ph2025
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…