2 papers
physics.app-ph2026
Are gate-all-around 2D CFETs the optimal architecture for the A2 node and beyond?
Fengben Xi, Gautam Gaddemane, Anshul Gupta +15
The paper investigates whether gate‑all‑around (GAA) 2D complementary field‑effect transistors (CFETs) can outperform silicon GAA CFETs at the A2 technology node, presenting an int…
cond-mat.mes-hall2025
Ab-initio-NEGF Fundamental Roadmap for Carbon-Nanotube and Two-Dimensional-Material MOSFETs at the Scaling and VDD Limit
Aryan Afzalian
Using accurate Hybrid-Functional DFT coupled with the Non-Equilibrium Green's function (NEGF) formalism, we explore and benchmark the fundamental scaling limits of CNT-FETs against…