128 citations · 380 across the 5 of their papers we have counts for
3 papers · 1 filter
Blocking of conducting channels widens window for ferroelectric resistive switching in interface-engineered Hf0.5Zr0.5O2 tunnel devices
Milena Cervo Sulzbach, Saúl Estandía, Jaume Gàzquez +3
Films of Hf0.5Z0.5O2 (HZO) contain a network of grain boundaries. In (111) HZO epitaxial films on (001) SrTiO3, for instance, twinned orthorhombic (o-HZO) ferroelectric crystallite…
Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films
Jike Lyu, Ignasi Fina, Raul Solanas +2
The metastable orthorhombic phase of hafnia is generally obtained in polycrystalline films, whereas in epitaxial films, its formation has been much less investigated. We have grown…
Strain-controlled responsiveness of slave half-doped manganite La0.5Sr0.5MnO3 layers inserted in BaTiO3 ferroelectric tunnel junctions
Greta Radaelli, Diego Gutiérrez, Mengdi Qian +7
Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enla…