205 citations · 596 across the 7 of their papers we have counts for
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physics.app-ph2021★ 68 cited
Polarization and resistive switching in epitaxial 2 nm HfZrO tunnel junctions
Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…
cond-mat.mtrl-sci2021★ 57 cited
Critical Effect of Bottom Electrode on Ferroelectricity of Epitaxial Hf0.5Zr0.5O2 Thin Films
Saul Estandia, Jaume Gazquez, Maria Varela +5
Epitaxial orthorhombic Hf0.5Zr0.5O2 (HZO) films on La0.67Sr0.33MnO3 (LSMO) electrodes show robust ferroelectricity, with high polarization, endurance and retention. However, no sim…