Polarization and resistive switching in epitaxial 2 nm Hf${}_{0.5}$Zr${}_{0.5}$O${}_2$ tunnel junctions

Milena Cervo Sulzbach, Huan Tan, Saul Estandia +4

In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafni…