18 citations · 26 across the 5 of their papers we have counts for
5 papers
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Abhijit Biswas, Mingfei Xu, Kai Fu +18
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride…
Nonlinear nanophotonic devices in the Ultraviolet to Visible wavelength range
Jinghan He, Hong Chen, Jin Hu +7
Although the first lasers invented operated in the visible, the first on-chip devices were optimized for near-infrared (IR) performance driven by demand in telecommunications. Howe…
Demonstration of beta-Ga2O3 Optical Waveguides and the Analysis of Their Propagation Losses in the UV-Visible Spectra
Jingan Zhou, Hong Chen, Houqiang Fu +10
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The pr…
On-chip directional octave-spanning supercontinuum generation from high order mode in near ultraviolet to infrared spectrum using AlN waveguides
Hong Chen, Jingan Zhou, Dongying Li +12
On-chip ultraviolet to infrared (UV-IR) spectrum frequency metrology is of crucial importance as a characterization tool for fundamental studies on quantum physics, chemistry, and…
A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN
Jossue Montes, Chen Yang, Houqiang Fu +6
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanica…