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S. Ivanov

4 papers hereh-index 345 citations10 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author2
  • middle author1
  • last author1

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.str-el2
  • cond-mat.mtrl-sci1
  • physics.app-ph1
same name
  • S. Ivanov — 64 papers, h 18
  • S. Ivanov — 62 papers, h 29
  • S. Ivanov — 27 papers, h 23
  • S. Ivanov — 23 papers, h 16
  • S. Ivanov — 22 papers, h 27
  • S. Ivanov — 11 papers, h 29

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20202022
most citedOrbital correlations in ultrathin films of late transition metals

5 citations · 6 across the 4 of their papers we have counts for

collaborators

4 papers

cond-mat.str-el2022★ 5 cited

Orbital correlations in ultrathin films of late transition metals

Sergei Ivanov, Joshua Peacock, Sergei Urazhdin

We develop a two-orbital Hubbard model of electron correlations in ultrathin (111)-oriented fcc films of late transition metals such as Co and Ni. Our model indicates that the Mott…

cond-mat.str-el2022

Electronic properties of the mean-field resonating valence bond model of cuprates

Sergei Urazhdin, Sergei Ivanov

We show that the mean-field resonating valence bond approximation proposed in 1987 by Baskaran, Zou, and Anderson describes gapless charge pair excitations confined to the boundari…

cond-mat.mtrl-sci2021

Nearly ideal memristive functionality based on viscous magnetization dynamics

Sergei Ivanov, Sergei Urazhdin

We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to th…

physics.app-ph2020★ 1 cited

Ideal memristor based on viscous magnetization dynamics driven by spin torque

Guanxiong Chen, Sergei Ivanov, Sergei Urazhdin

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dyna…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.