101 citations · 872 across the 41 of their papers we have counts for
6 papers · 1 filter
Photogalvanic probing of helical edge channels in 2D HgTe topological insulators
K. -M. Dantscher, D. A. Kozlov, M. T. Scherr +10
We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs).…
Inverse-phase Rabi oscillations in semiconductor microcavities
A. V. Trifonov, N. E. Kopteva, M. V. Durnev +7
We study experimentally the oscillations of a non stationary transient signal of a semiconductor microcavity with embedded InGaAs quantum wells. The oscillations occur as a result…
Atomically inspired approach and valley Zeeman effect in transition metal dichalcogenide monolayers
D. V. Rybkovskiy, I. C. Gerber, M. V. Durnev
We developed a six-band model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in -valleys. The set of parameters for the $…
Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
Todd Karin, Xiayu Linpeng, M. V. Durnev +6
We measure the donor-bound electron longitudinal spin-relaxation time () as a function of magnetic field () in three high-purity direct-bandgap semiconductors: GaAs, InP, a…
Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
M. Vidal, M. V. Durnev, L. Bouet +10
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath…
Giant permanent dipole moment of 2D excitons bound to a single stacking fault
Todd Karin, Xiayu Linpeng, M. M. Glazov +7
We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an ex…