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physics.app-ph2020★ 9 cited
External control of GaN band bending using phosphonate self-assembled monolayers
T. Auzelle, F. Ullrich, S. Hietzschold +7
We report on the optoelectronic properties of GaN and surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correl…
physics.app-ph2019
Electronic properties of air-exposed GaN and surfaces after several device processing compatible cleaning steps
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold +6
We report on the electronic properties of GaN and surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, ann…