most citedElectronic interaction of slow hydrogen and helium ions in the nickel-silicon system

29 citations · 49 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2020★ 17 cited

Photochromic response of encapsulated oxygen-containing yttrium hydride thin films

Marcos V. Moro, Sigurbjörn M. Aðalsteinsson, Tuan. T. Tran +4

Photochromic oxygencontaining yttriumhydride thin films are synthesized by argonmagnetron sputtering on microscope slides. Some of them are encapsulated with a thin, trans…

cond-mat.mtrl-sci2020★ 2 cited

Unprecedented Severe Atomic Redistribution in Germanium Induced by MeV Self-Irradiation

Tuan T. Tran, Daniel Primetzhofer

We present a pronounced unprecedented surface modification of a crystalline Ge layer under heavy ion irradiation with a Ge ion beam at high energy of 2.5 MeV. Under the irradiation…

cond-mat.mtrl-sci2020

In-situ Nanoscale Characterization of Composition and Structure during Formation of Ultrathin Nickel Silicide

Tuan T. Tran, Christian Lavoie, Zhen Zhang +1

We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(100) using in-situ high resolution ion scattering and high resoluti…

cond-mat.mtrl-sci2019

In-situ characterization of ultrathin nickel silicides using 3D medium-energy ion scattering

Tuan Thien Tran, Lukas Jablonka, Christian Lavoie +2

We demonstrate a novel approach for non-destructive in-situ characterization of phase transitions of ultrathin nickel silicide films using 3D medium-energy ion scattering. The tech…

cond-mat.mtrl-sci2019★ 1 cited

Non-localized states and high hole mobility in amorphous germanium

Tuan T. Tran, Jennifer Wong-Leung, Lachlan A. Smillie +3

Covalent amorphous semiconductors, such as amorphous silicon (a-Si) and germanium (a-Ge), are commonly believed to have localized electronic states at the top of the valence band a…

physics.app-ph2019

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting

Tuan T. Tran, Quentin Hudspeth, Yining Liu +6

Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgap group IV material. Recently, ion implantation followed by pulsed laser melting has been shown to be a…

physics.atom-ph2019★ 29 cited

Electronic interaction of slow hydrogen and helium ions in the nickel-silicon system

Tuan Thien Tran, Lukas Jablonka, Barbara Bruckner +6

Electronic stopping cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scatte…