19 citations · 21 across the 3 of their papers we have counts for
7 papers
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…
Analysing the linearised radially polarised light source for improved precision in strain measurement using micro-Raman spectroscopy
V. Prabhakara, T. Nuytten, H. Bender +3
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale.…
Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
Albert de Jamblinne de Meux, Geoffrey Pourtois, Jan Genoe +1
The effects of hole injection in amorphous-IGZO is analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture…
Quantum Transport in a Nanosize Silicon-on-Insulator Metal-Oxide-Semiconductor
M. D. Croitoru, V. N. Gladilin, V. M. Fomin +4
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The…
Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells
S. D. Ganichev, V. V. Bel'kov, L. E. Golub +9
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements…
Commensurability effects in Andreev antidot billiards
J. Eroms, M. Tolkiehn, D. Weiss +3
An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe…