9 citations · 10 across the 2 of their papers we have counts for
2 papers
physics.app-ph2020★ 1 cited
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior
Joao H. Quintino Palhares, Yann Beilliard, Fabien Alibart +5
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-d…
physics.app-ph2020★ 9 cited
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
Yann Beilliard, François Paquette, Frédéric Brousseau +3
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhi…