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Ab initio simulation of band-to-band tunneling FETs with single- and few-layer 2-D materials as channels
Áron Szabó Cedric Klinkert, Davide Campi, Christian Stieger +2
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material…
2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
Cedric Klinkert, Áron Szabó, Christian Stieger +3
Thanks to their unique properties single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However…
Effect of moiré superlattice reconstruction in the electronic excitation spectrum of graphene-metal heterostructures
Antonio Politano, Guus J. Slotman, Rafael Roldán +4
We have studied the electronic excitation spectrum in periodically rippled graphene on Ru(0001) and flat, commensurate graphene on Ni(111) by means of high-resolution electron ener…